| PART |
Description |
Maker |
| IXSH35N140A |
High Voltage, High speed IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CPV362MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| CPU165MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| CPV362MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
| BTS550P |
Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
From old datasheet system
|
Siemens Semiconductor Group
|
| CPV364MM |
Short Circuit Rated Fast IGBT 短路额定快速IGBT
600V 3-Phase Bridge IGBT in a IMS-2 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| RL1220S-1R0-F RL0510S-1R0-F RL0816S-1R0-F |
low resistance value chip resistors with short-side electrodes for high-precision current detection. 低电阻值与短期的高精度电流检测端电极片式电阻
|
Electronic Theatre Controls, Inc.
|
| IRG4BC10K IRG4BC10KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
